Improving Thickness Uniformity of Amorphous Oxide Films Deposited on Large Substrates by Optical Flux Mapping

In this study, three amorphous oxide thin films are prepared by an electron beam evaporation combined with ion-assisted deposition technique. With the aid of optical flux mapping method, film thickness distribution good uniformity can be obtained appropriate coating masks. Three metal single-layer SiO2, Ta2O5 and Nb2O5, respectively. These were deposited on a substrate holder radius 275 mm that was divided into five different segments. Based we effectively simulate geometric dimensions mask obtain width at If is function masking area center angle, it necessary to determine segments use surface profiler accurately measure thickness. We analyzed The experimental measurement results show deviation 0.38% for 0.36% Ta2O5, 0.15% Nb2O5 films,